Excited to share a major milestone from our student project at TU Berlin!
Our student successfully designed and built a dual-purpose PCB capable of performing both pulsed drain and pulsed gate characterization of GaN-HEMTs — a critical step in accurately assessing the dynamic behavior of GaN-HEMTs.
Our work, based on the paper “Pulsed Characterization of GaN-HEMTs – Impact of Charge Trapping”, reveals a crucial insight: the measurement method matters. While both pulsed drain and pulsed gate techniques yield consistent results for silicon MOSFETs, they produce significant differences in GaN-HEMTs — primarily due to gate-induced charge trapping. This can shift the transfer characteristic and alter the apparent on-state resistance, making device comparison and design optimization highly sensitive to test conditions.
This project underscores why measurement methodology must be clearly documented — especially when comparing datasheets or benchmarking devices across vendors.
A huge thank you to AISLER for their generous sponsorship and support. Your partnership enabled us to develop this advanced test platform, gain hands-on experience with real-world power electronics challenges, and contribute meaningful insights to the field.
We’re proud to bridge academic research with practical engineering — and we’re just getting started!
#PowerElectronics #GaNHEMT #PulsedCharacterization #ChargeTrapping #StudentProject #TUBerlin #AISLER #PowerDevices #Innovation #Engineering #Research #WideBandGap #SwitchingPower #ElectricalEngineering
Complete Test Setup (designed PCB in the middle):
